As the need to scale transistors to ever-smaller sizes continues to press on technology designers, the impact of parasitic resistance and capacitance can approach or even outpace other aspects of ...

Samsung Electronics has announced that its development of the 3 nm gate-all-around (GAA) process called 3GAE is on track and that it has made available version 0.1 of its process design kit (PDK) in ...

With continuing finFET device process scaling, micro loading control becomes increasingly important due to its significant impact on yield and device performance [1-2]. Micro-loading occurs when the ...

The semiconductor industry faces a major change in the way that ICs are made in order to keep improving performance and density, a change that has potential ramifications for design methodologies.

HSINCHU, Taiwan, R.O.C., Feb. 3, 2023 – TSMC today announced the launch of its “TSMC University FinFET Program,” aimed at developing future IC design talent for the industry and empowering academic ...

SAN JOSE, Calif.--(BUSINESS WIRE)--Cadence Design Systems, Inc. (NASDAQ:CDNS) today announced its continued collaboration with TSMC to certify its design solutions for TSMC 5nm and 7nm+ FinFET process ...

TSMC and Global Foundries have already announced their plans for 14nm and 16nm FinFET chips, that they should start building in 2014, and then we’ll probably see them no sooner than 2015, which is ...

TSMC's has disclosed that its 3nm process will continue to adopt a FinFET structure, but the foundry reportedly will take a new approach to its 2nm chip development, replacing FinFET with GAA ...

How does a nanosheet transistor compare with a FinFET? Issues involved in developing and manufacturing nanosheet transistors. Benefits of adopting nanosheet transistors in chip design. It’s the end of ...

Intel Corporation today announced a detailed process and packaging technology roadmaps of “foundational innovations” for products through 2025 and beyond. In addition to announcing RibbonFET, its ...