High-voltage silicon-carbide (SiC) MOSFETs and diodes combine the advantages of fast switching speeds and very low switching losses. This allows power converters designed with them to operate at ...

This article explains the switching behavior of power MOSFETs in practical application circuits and shows the reader/designer how to choose the right device for the application using the ...

A power MOSFET is almost invariably used in today's high-frequency power converter applications being a voltage controlled, fast switching and majority-carrier device. However, MOSFET's major ...

This technical FAQ examines three modeling gaps identified in engineering literature and outlines algorithmic methods to address them.

GaN and SiC mosfets were tested and compared by a distribution company using the GaNdalf modular development platform. David Woodcock reports on the findings. The traditional silicon power mosfet is a ...

Download this article in PDF format. Switching losses are inevitable in any power device. But these losses can be minimized through optimization and rigorous measurement of design parameters related ...