Scientists have created the world's thinnest magnet, just one atom thick, which could revolutionize computer memory in the ...

A new study reveals that insulating buffer layers are no longer needed for ultrathin magnetic racetrack devices, unlocking new paths for seamless integration with functional substrates. (Nanowerk News ...

Researchers demonstrate a new strategy for magnetization reversal in multiferroic materials, opening pathways to more energy-efficient electronics. (Nanowerk News) As the digital world demands greater ...

This collection supports and amplifies research related to SDG 9 - Industry, innovation and infrastructure. Recent advances in understanding and manipulating spin, orbital, and charge currents via ...

A new class of magnetism called altermagnetism has been imaged for the first time in a new study. The findings could lead to the development of new magnetic memory devices with the potential to ...

The discovery of electric-field-induced magnetization reversal perpendicular to the electric field in multiferroic materials could revolutionize memory design, enabling more space- and ...

Japanese scientists have developed a spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) device with the world’s lowest write power in a significant step toward energy-efficient, ...

Over on his blog our hacker [Scott Baker] has a Magnetic Bubble Memory Mega-Post. If you haven’t heard of magnetic bubble memory before it’s basically obsolete nonvolatile memory. Since the 1970s when ...

Researchers at the University of Chicago Pritzker School of Molecular Engineering have made unexpected progress toward developing a new optical memory that can quickly and energy-efficiently store and ...

As the digital world demands greater data storage and faster access times, magnetic memory technologies have emerged as a promising frontier. However, conventional magnetic memory devices have an ...

Most present-day forms of fast, random access computer memory (RAM) are based on the presence or absence of an electrical charge to indicate a “1” or a “0.” This memory is truly fast, with readily ...