【摘要】针对硅基绝缘栅双极型晶体管（IGBT）难以进一步满足电动汽车高功率密度、低导通损耗、高散热能力等需求的不足，综述了车用碳化硅金属氧化物半导体场效应晶体管（SiC-MOSFET）的最新研究进展。通过总结SiCMOSFET 在电动汽车牵引逆变器、DC/DC 电源变换 ...

Adoption of silicon carbide (SiC) is becoming more widespread among electric-vehicle (EV) systems such as dc-dc converters, traction inverters, and on-board chargers (OBCs) with bidirectional ...

本文介绍了新的CoolSiC™ 2000V SiC沟槽栅MOSFET系列。该系列单管产品采用新的TO-247PLUS-4-HCC封装，具有加大的爬电距离和电气间隙，使用.XT焊接芯片技术。芯片同时用于62mm封装的半桥模块和EasyPACK™ 3B封装的升压模块。这些产品的性能提高了系统功率密度，可靠性和 ...

Could hybrid-electric aircraft help significantly reduce the carbon footprint of commercial aviation? The data collected from the first all-up test flight of EcoPulse, a hybrid-electric distributed ...

每经AI快讯，9月9日，东微半导在互动平台表示，公司很早就已布局了SiC业务，以高性能电源应用方向为切入口，积极开展研发工作。公司的SiC MOSFET、Si2C MOSFET、SiC SBD已实现规模化量产，相关产品的性能指标和同类型竞品对比优势明显，第四代SiC MOSFET产品技术 ...

Rohm has begun online sales of new SiC moulded modules: TRCDRIVE pack, HSDIP20 and DOT-247 from distributors such as DigiKey.

本文介绍了新的CoolSiC™ 2000V SiC沟槽栅MOSFET系列。该系列单管产品采用新的TO-247PLUS-4-HCC封装，具有加大的爬电距离和电气间隙，使用.XT焊接芯片技术。芯片同时用于62mm封装的半桥模块和EasyPACK™ 3B封装的升压模块。这些产品的性能提高了系统功率密度，可靠性和 ...

Santa Clara, CA and Kyoto, Japan, April 28, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced that SMA Solar Technology AG, a leading global specialist in photovoltaic and storage system ...

Silicon carbide (SiC) power devices have been commercially available for ten years. During that time, there has been a steady increase in voltage ratings to 1,200 V and 1,700 V for SiC-Schottky diodes ...

ROHM Co., Ltd. has begun online sales of new SiC molded modules: TRCDRIVE pack (TM), HSDIP20 and DOT-247. Amid growing concerns over tightening global power supply and need for energy conservation, ...

Apex Microtechnology, a provider of high-power analog components, recently announced the launch of the SA110, a high-current, high-voltage half H-bridge that the company claims is the first module to ...

SemiQ has announced a family of co-packaged 1200 V SOT-227 MOSFET modules based on its third-generation SiC technology. 1200 V Gen3 SiC MOSFET modules Credit: SemiQ In addition to smaller die sizes, ...