There is a great deal of activity in wide bandgap (WBG) power electronics lately, with Gallium Nitride (GaN) and Silicon Carbide (SiC) devices getting a lot of attention due to the technologies’ ...

Properties of wide-bandgap materials, with a focus on SiC. How a bridgeless totem-pole topology can help cut losses. A breakdown of the half-bridge inverter topology The efficiency of power-conversion ...

Integrated circuit (IC) sizes continue to grow as they meet the compute requirements of cutting-edge applications such as artificial intelligence (AI), autonomous driving, and data centers. As design ...

Herein, wafer-scale 8-nm films of Sn-doped gallium oxide (Ga 2 O 3) were fabricated via physical vapor deposition at room temperature. Using these films, 8-nm Sn-doped Ga 2 O 3 field-effect ...

An international team of researchers from Queen Mary University of London, the University of Oxford, Lancaster University, and the University of Waterloo have developed a new single-molecule ...

Communication satellites and flying antenna platforms can contribute to the comprehensive and resilient operation of global mobile networks of the fifth and sixth generation (5G, 6G). However, as ...

Scientists made a single-molecule transistor using quantum interference to control electron flow. This new design offers high on/off ratio and stability, potentially leading to smaller, faster, and ...

Designed for the toughest engineering environments, NXP Semiconductors N.V. (NASDAQ: NXPI) today unveiled its new XR family of “eXtremely Rugged” LDMOS RF power transistors. The XR family is designed ...

Gallium nitride is starting to make broader inroads in the lower-end of the high-voltage, wide-bandgap power FET market, where silicon carbide has been the technology of choice. This shift is driven ...