Discrete power MOSFETs employ semiconductor processing techniques that are similar to those of today’s VLSI circuits, although the device geometry, voltage and current levels are significantly ...
Power MOSFETs are well known for superior switching speed, and they require very little gate drive power because of the insulated gate. In these respects, power MOSFETs approach the characteristics of ...
金属-氧化物半导体场效应晶体管，简称金氧半场效晶体管（Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET）是一种可以广泛使用在模拟电路与数字电路的场效晶体管（field-effect transistor）。 MOSFET最早出现在大概上世纪60年代，首先出现在模拟电路的应用。功率MOSFET ...
金属-氧化物半导体场效应晶体管，简称金氧半场效晶体管（Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET）是一种可以广泛使用在模拟电路与数字电路的场效晶体管（field-effect transistor）。 MOSFET最早出现在大概上世纪60年代，首先出现在模拟电路的应用。功率MOSFET ...
The power semiconductor evolution started with germanium and selenium devices that succumbed to silicon types around the 1950s. Broader silicon usage stemmed from its improved physical properties ...
In the wake of gallium-nitride (GaN) transistor introductions, a number of semiconductor makers have begun to reassess the role played by conventional MOSFETs. The introduction of GaN devices doesn’t ...
The microelectronics revolution might best be characterized by the motto 'smaller is better'. A unique attribute of the silicon metal–oxide–semiconductor field-effect transistor (MOSFET), the ...
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