Abstract: Because of the wide application of die top interconnects with Cu bonding wire, the weak points in SiC MOSFET power modules presented a huge difference compared to the conventional modules ...

Abstract: With the continuous development and progress of science and technology, the third-generation semiconductor power devices (SPDs) represented by SiC MOSFETs have become key devices in the ...

This resource provides clear explanations of how switching regulators work and how voltage boosting is achieved efficiently ...