Abstract: A high-power single-pole double throw (SPDT) switch IC using AlGaN/GaN heterojunction field-effect transistors (HFETs) is demonstrated for the first time. The reduction of on-resistance ...
Abstract: Monolithic 3D back-end of line (BEOL) FinFET switch arrays are demonstrated in large single crystalline Si islands (2.56 μm 2), whose location, size and shape are determined by design.
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